fast switching npn power transistor semelab ltd reserves the right to change test condi tions, parameter limits and package dimensions with out notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing a n order. semelab ltd semelab ltd semelab ltd semelab ltd coventry road, lutterworth, leicestershire, le17 4 jb document number 8320 telephone +44 (0) 1455 556565 fax +44 (0) 1455 552612 issue 1 email: sales@semelab-tt.com website: http://www.semelab-tt.com page 1 of 3 BUV62A ? fast switching times ? low switching losses ? low saturation voltage ? hermetic to3 metal package. ? ideally suited for motor control, switching and linear applications ? high reliability screening options available absolute maximum ratings (t c = 25c unless otherwise stated) v cev collector ? emitter voltage v be = -1.5v 400v v ceo collector ? emitter voltage 300v v ebo emitter ? base voltage 7v i c continuous collector current 40a i cm peak collector current 60a i b base current 8a i bm base peak current 12a p d total power dissipation at t c = 25c 250w derate above 25c 1.43w/c t j junction temperature range -55 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters min. typ. max. units r jc thermal resistance, junction to case 0.70 c/w
fast switching npn power transistor BUV62A semelab ltd semelab ltd semelab ltd semelab ltd coventry road, lutterworth, leicestershire, le17 4 jb document number 8320 telephone +44 (0) 1455 556565 fax +44 (0) 1455 552612 issue 1 email: sales@semelab-tt.com website: http://www.semelab-tt.com page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ. max. units v (br)ceo (1) collector-emitter breakdown voltage i c = 10ma i b = 0 300 v v (br)ebo emitter-base breakdown voltage i e = 50ma i c = 0 7 v ce = 400v v be = -1.5v 1.0 i cex collector cut-off current t j = 100c 4.0 v ce = 400v r be = 10 1.0 i cer collector cut-off current t j = 100c 5.0 i ebo emitter cut-off current v eb = 5v i c = 0 1.0 ma i c = 15a i b = 1.5a 0.9 v v ce(sat) (1) collector-emitter saturation voltage t j = 100c 1.9 i c = 15a i b = 1.5a 1.3 v be(sat) (1) base-emitter saturation voltage t j = 100c 1.3 notes notes notes notes (1) pulse width 300us, 2% dynamic characteristics (inductive load) symbols parameters test conditions min. typ. max. units t s storage time 2.2 t f fall time 0.2 t c crossover time v cc = 250v i c = 15a v bb = -5v l c = 0.83mh v clamp = 300v i b = 1.5a r b2 = 1.6 t j = 100c 0.3 s v cew maximum collector emitter voltage without snubber v cc = 50v v bb = -5v l c = 0.83mh t j = 125c i cwoff = 22a i b1 = 1.5a r bb = 1.6 300 v
fast switching npn power transistor BUV62A semelab ltd semelab ltd semelab ltd semelab ltd coventry road, lutterworth, leicestershire, le17 4 jb document number 8320 telephone +44 (0) 1455 556565 fax +44 (0) 1455 552612 issue 1 email: sales@semelab-tt.com website: http://www.semelab-tt.com page 3 of 3 mechanical data dimensions in mm (inches) to3 (to - 204ae) pin 1 - base pin 2 - emitter case - collector 3 9 . 9 5 ( 1 . 5 7 3 ) m a x . 1 7 . 1 5 ( 0 . 6 7 5 ) 1 6 . 6 4 ( 0 . 6 5 5 ) 3 0 . 4 0 ( 1 . 1 9 7 ) 3 0 . 1 5 ( 1 . 1 8 7 ) 2 6 . 6 7 ( 1 . 0 5 0 ) m a x . 1 1 . 1 8 ( 0 . 4 4 0 ) 1 0 . 6 7 ( 0 . 4 2 0 ) 1 2 4 . 0 9 ( 0 . 1 6 1 ) 3 . 8 4 ( 0 . 1 5 1 ) d i a . 2 p l c s . 2 0 . 3 2 ( 0 . 8 0 0 ) 1 8 . 8 0 ( 0 . 7 4 0 ) d i a . 7 . 8 7 ( 0 . 3 1 0 ) 6 . 9 9 ( 0 . 2 7 5 ) 1 2 . 0 7 ( 0 . 4 7 5 ) 1 1 . 3 0 ( 0 . 4 4 5 ) 1 . 7 8 ( 0 . 0 7 0 ) 1 . 5 2 ( 0 . 0 6 0 ) 1 . 5 7 ( 0 . 0 6 2 ) 1 . 4 7 ( 0 . 0 5 8 ) d i a . 2 p l c s .
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